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A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM

Essay specific features

 

Issue:

Science

 

Written by:

John S

 

Date added:

November 17, 2014

 

Level:

University

 

Grade:

A

 

No of pages / words:

4 / 887

 

Was viewed:

2831 times

 

Rating of current essay:

 
Essay content:

Cell transistor with W gate technology exhibits a sufficient saturation current(bP) of -40~1A with threshold voltage (Vbat) of 0.9V and satisfactory ring oscillator delay characteristics of - 5Ops. INTRODUCTION The first principle in DRAM integration would be miniaturization of cell in the viewpoint of cost reduction...
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In this study, we have integrated 0.08pm2-sized 8F2 stack DRAM cell. It is believed that this cell is smallest 8F2 cell that has been integrated ever. We have employed ArF patteming to get 100nm-cell resolution. Automatic OPC and manual OPC is applied to get expected CD for corelperi Tr with 0...
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