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Essay heading: A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM
 
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Issue: Science
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Date added: May 30, 2007
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No of pages / words: 4 / 887
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Introduction of new technology in patterning and capacitor technology is ascribed to integration work below lOOnm regime. Resolution limit of KrF lithography is expected to be around IlOnm, which means that sub lOOnm node needs new lithography technique beyond KIF lithography. As for cell contacts, conventional poly-Si plug has been compared to newly introduced Epi-Si plug while Epi-Si plug has more margin in cell contact resistance uniformity...
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Resolution limit of KrF lithography is expected to be around IlOnm, which means that sub lOOnm node needs new lithography technique beyond KIF lithography. As for cell contacts, conventional poly-Si plug has been compared to newly introduced Epi-Si plug while Epi-Si plug has more margin in cell contact resistance uniformity...
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