Essay heading: A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM

Essay specific features

 

Issue:

Science

 

Written by:

 

Date added:

May 30, 2007

 

Level:

 

Grade:

 

No of pages / words:

4 / 887

 

Was viewed:

0 times

 

Rating of current essay:

 
Essay content:

Introduction of new technology in patterning and capacitor technology is ascribed to integration work below lOOnm regime. Resolution limit of KrF lithography is expected to be around IlOnm, which means that sub lOOnm node needs new lithography technique beyond KIF lithography. As for cell contacts, conventional poly-Si plug has been compared to newly introduced Epi-Si plug while Epi-Si plug has more margin in cell contact resistance uniformity...
displayed 300 characters

Custom written essay

All essays are written from scratch by professional writers according to your instructions and delivered to your email on time. Prices start from $11.99/page

Order custom paper

Full essays database

You get access to all the essays and can view as many of them as you like for as little as $28.95/month

Buy database access

Order custom writing paper now!

  • Your research paper is written
    by certified writers
  • Your requirements and targets are
    always met
  • You are able to control the progress
    of your writing assignment
  • You get a chance to become an
    excellent student!

Get a price guote

 
 

Resolution limit of KrF lithography is expected to be around IlOnm, which means that sub lOOnm node needs new lithography technique beyond KIF lithography. As for cell contacts, conventional poly-Si plug has been compared to newly introduced Epi-Si plug while Epi-Si plug has more margin in cell contact resistance uniformity...
displayed next 300 characters

General issues of this essay:

Related essays:

Close